Design of High Breakdown Voltage and Power Dissipation of 6H-SIC DIMOSFET using Uniformly Doped Profile of Drift Region
Sanjay Sharma1, Amarjeet Kaur2, Shaweta Narula3, Meenu Jangir4, Ashish Sharma5, Hemchand Vashist6
1Asst Professor Sanjay Sharma, Electronics & Comm. Engineering Department, ACME, India.
2Er. Amarjeet Kaur, Electronics & Comm. Engineering Department, ACME, India.
3Er. Shaweta Narula, Electronics & Comm. Engineering Department, ACME, India.
4Er. Meenu Jangir, Electronics & Comm. Engineering Department, AITM, India.
5Er. Ashish Sharma, Electronics & Comm. Engineering Department, ACME, India.
6Er. Hemchand Vashist, Electronics & Comm. Engineering Department, ACME, India.
Manuscript received on November 01, 2012. | Revised Manuscript received on November 02, 2012. | Manuscript published on November 05, 2012. | PP: 286-291 | Volume-2 Issue-5, November 2012. | Retrieval Number: E1065102512/2012©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper a novel approach for designing of High Breakdown Voltage and Power Dissipation of 6H-SiC DIMOSFET Using Uniformly Doped Profile of Drift Region has been presented. All the calculations& graphs for Forward Voltage, Power Dissipation, On Resistance and Drain to Source Voltage at different levels of doping for different values of Current Density have been observed using MATLAB 7.0
Keywords: IMOSFET, Forward Voltage, Power Dissipation, On Resistance, Drain to Source Voltage, Current Density, Doping, MATLAB