Synthesis of Effect of Self Heating Effect on Electrical Characteristics in SOI MOSFET
Jyoti Kumawat1, Mukesh Kumar Yadav2
1Jyoti Kumawat, M.Tech Scholar, Rajasthan Technical University, Kota (Rajasthan), India.
2Mukesh Kumar Yadav, Assistant Professor, Sri Balaji College of Engineering and Technology, Jaipur (Rajasthan), India.
Manuscript received on August 21, 2017. | Revised Manuscript received on August 27, 2017. | Manuscript published on September 05, 2017. | PP: 8-11 | Volume-7 Issue-4, September 2017. | Retrieval Number: C3036077317/2017©BEIESP
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©The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/
Abstract: This article describes the use of silvaco TCAD tools to develop SOI MOSFET technology and device simulation results. The purpose of this simulation is to investigate the effect of self heating effect on the electrical properties of the device. The results show that the impact of self heating phenomenon on the Id-Vd curve. The device was manufactured using ATHENA software, and the simulation was done with the help of ATLAS software. All charts were made using Silvaco. We briefly introduce SOI MOSFETs Transistors and problems at high temperatures Self-heating effect, and then we present the simulation results get related using the SILVACO TCAD tool SOI n-MOSFET structure. We will also show some of the simulation results we have obtained The effect of temperature changes on our structure directly affect its drain current.
Keywords: SOI technology, SOI MOSFET, Self-heating effects, Silvaco Software, Silicon-On-Insulator, MOSFET, Silvaco, ATHENA, ATLAS.