Transient Thermal Analysis of Pulsed Silicon SDR IMPATT at 35 GHz
L. P. Mishra1, A. Acharyya 2 M. Mitra3
1Sri L.P. Mishra is an assistant professor at the Dept. of ECE, ITER, SOA University, Bhubaneswar, Orissa and currently doing his research at BESU, Shibpur.
2Sri A. Acharyya did his M. Tech at Institute of Radio Physics & Electronics, Kolkata University and currently doing his Ph.D. work at Kolkata University, India.
3Sri A. Acharyya did his M. Tech at Institute of Radio Physics & Electronics, Kolkata University and currently doing his Ph.D. work at Kolkata University, India.
Manuscript received on February 04, 2013. | Revised Manuscript received on February 28, 2013. | Manuscript published on March 05, 2013. | PP: 102-106 | Volume-3 Issue-1, March 2013. | Retrieval Number: A1272033113/2013©BEIESP
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper the transient thermal analysis of 35 GHz pulsed silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device is presented. A double-iterative field maximum computer method based on drift-diffusion model is used to obtain the DC and high frequency properties of the device. A transient thermal model has been developed by the authors’ to study the temperature transients in pulsed Si SDR IMPATT at 35 GHz. Results show that the device is capable of delivering a peak pulsed power output of 7.40 W with 8.46% DC to RF conversion efficiency. The maximum junction temperature rise is 352.5 K for peak pulsed bias current of 1.08 Ampere with 200 ns pulsewidth and 1.0% duty cycle.
Keywords: Millimeter-wave, pulsed Si SDR IMPATTs, temperature transients, thermal analysis.