Effects of Photo Illumination on Diamond Based DDR IMPATT Diode Operating at MM-wave Frequency Band
B. Chakrabarti1, D. Ghosh2, M. Mitra3
1B. Chakrabarti, Department of ECE, Bengal Institute of Technology, Kolkata, India .
2D. Ghosh, Department of ECE, Future Institute of Engineering & Management, Kolkata,India.
3D. Ghosh, Department of ECE, Future Institute of Engineering & Management, Kolkata, India.
Manuscript received on April 03, 2013. | Revised Manuscript received on April 29, 2013. | Manuscript published on May 05, 2013. | PP: 75-78 | Volume-3, Issue-2, May 2013. | Retrieval Number: B1433053213/2013©BEIESP
Open Access | Ethics and Policies | Cite
© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The effect of photo illumination on the d.c and small signal performance of diamond based IMPATT diode operating at W-band is investigated using a modified double iterative simulation method. Under optical illumination additional photo generated carriers are produced in the device which modulates the admittance and negative resistance properties of the diode. It is found that the operating frequency shift upward accompanied by degradation of negative conductance, negative resistance, quality factor and output power density level under photo illumination. Decrement in the values of negative conductivity by 19.2 % and in total negative resistance by 21 % has been observed when the diode is exposed to photo illumination. It is also established that the d.c properties of the diode become inferior as the intensity of optical illumination increases.
Keywords: Diamond IMPATT, Photo illumination, W-band, Negative Conductivity, Resistivity.